摘要
根据现有物理学理论推导得出的闪络场强Et和闪络电压Vt的表达式显示,影响闪络场强和闪络电压的物理因素有:初始电子的出射状态(出射动能A0、出射角度θ)、绝缘材料介电常数ε、绝缘体表面吸附气体分子脱附系数γ、绝缘长度L、绝缘体表面单位面积的脱附气体分子数M、脱附气体离开绝缘体表面的速率vgas等等。利用MathCAD绘图软件绘制出Et和Vt随绝缘长度的变化趋势图证明,两曲线变化趋势及量级与所得实验结果一致。实验研究也证明,随着绝缘长度的增加,真空绝缘沿面闪络场强呈下降趋势;应用二次电子崩理论分析真空闪络的发生发展机理是合理的。
Experimental results relating to the dependence of surface flashover field strength on the physical parameters in vacuum were summarized. The results show that the surface field strength decreases along with the increase of insulation length. Based on exiting physical theories, the expression of E t and V t was deduced. The expressions show that the physical parameters relating to fla shover field strength include initial electrons＇ state, insulating material＇s dielectric constant ε, desorption coefficient γ, insulation length L, desorption gas molecule numbers per unit area M, desorbed gases＇ leaving rate vgas, etc. Software MathCAD was used to draw Et and Vt curves, which are consistent with the experimental results.
出处
《绝缘材料》
CAS
2008年第4期56-57,61,共3页
Insulating Materials
关键词
真空
闪络场强
脱附
vacuum
surface flashover field strength
desorption
