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基于混合SET/MOSFET的比较器

A Comparator Based on Hybrid Single-Electron Transistor and MOFET
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摘要 基于双输入单电子晶体管与MOSFET的混合结构I-V特性和数字电路的逻辑设计思想,提出了一种由5个双栅极SET和6个MOSFET构成的一位比较器电路结构。该比较器有以下优点:利用双栅极SET和MOSFET构成逻辑块使电路结构大为简化;减少了管子的数目;电压兼容性好,驱动性能高;输入和输出高低电平都接近于1V和0V;静态总功耗低,为nW级。仿真结果验证了它的正确性。 Based on the I-V characteristics of hybrid structure of double-input single-electron transistor and MOSFET and the concepts of digital integrated circuit design, a conlparator, which consists of 5 double-gate SETs and 6 MOSFETs, is proposed. The comparator has the following excellent characteristics： simplifying the circuit structure with the logic block of double-gate SET and MOSFET, decreasing the number of transistors, fine compatibility of voltage, high drivability, high and low voltage approximating 1V and 0V, the total static power of nW . The accuracy is validated by the simulation result of MIB-model SET.
作者 冯朝文 蔡理
机构地区 空军工程大学理学院
出处 《微计算机信息》 北大核心 2008年第20期290-292,共3页 Control & Automation
基金 陕西省自然科学基础研究计划项目(2005F20) 空军工程大学理学院科研资助项目(编号不公开)
关键词 单电子晶体管 双栅极SET 比较器 MIB模型 single-electron transistor double-gate single-electron transistor comparator MIB-model
分类号 TN402 [电子电信—微电子学与固体电子学]
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参考文献9

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微计算机信息
2008年 第20期

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