摘要
为了研究不同激光对半导体Si表面的损伤机制,实验中采用扫描电镜记录1064 nm激光和248 nm激光对单晶Si材料的表面损伤。通过比较,发现在紫外光辐照下Si表面熔融效应明显并且出现了清晰的周期性条纹。经分析认为表面损伤主要是热应力、激光自持爆轰波的冲击压力和蒸发波的反冲力所导致,损伤形貌的差异则源于材料对不同激光的吸收系数有显著差别。
In this experiment, the morphological changes of Si surface damaged by different laser types with wavelengths 1 064 nm and 248 nm were recorded by the SEM micrographs. In comparison with infrared lights, the fused phenomenon was much more distinct and laser-induced periodic structures were observed on the surface under ultraviolet radiation. The mechanism of laser damage is contributions of the thermal stress, shock pressure of a laser supported detonation wave （LSDW） and the recoil pressure of the vaporizing wave. And the differnces of morphological changes on surface mostly result from the different absorption coefficients for different laser types.
出处
《上海工程技术大学学报》
CAS
2008年第2期104-108,共5页
Journal of Shanghai University of Engineering Science
关键词
光吸收系数
损伤机制
热应力
absorption coefficient
mechanism of laser damage
thermal stress
