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硅纳米晶粒的发光特性及其应用 被引量:1

Luminescence Properties and Optical Applications of Silicon Nanocrystals
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摘要 硅纳米晶粒具有独特的光致发光(PL)和电致发光(EL)特性,在纳米光电子器件中具有巨大的潜在应用价值。通过近年来硅纳米晶粒的研究成果,总结了影响硅纳米晶粒发光特性的各种因素和各种条件下的发光机制,并综合评述了硅纳米晶粒在发光二极管、激光器等纳米发光器件及荧光粉等方面的应用,指出了未来硅纳米晶粒的研究方向。 Silicon nanocrystals have special photoluminescent (PL)and electroluminescent (EL) characteristics, so they will have huge potential application value in photoelctronic nanodevices. Based on the research results of silicon nanocrystal in recent years,series of factors that influence the luminescence properties of silicon nanocrystals and the luminescence mechanism of silicon nancrystals in different conditions are summarized in this paper. Moreover, we comprehensively discuss the application of silicon nanocrystals in light emitting devices such as light emitting diode, laser etc and in fabrication of nanophosper,and then we point out the development direction of the research of silicon nanocrystal in future.
出处 《硅酸盐通报》 CAS CSCD 北大核心 2008年第3期524-531,共8页 Bulletin of the Chinese Ceramic Society
基金 高等学校博士点科学基金
关键词 硅纳米晶粒 发光特性 发光机制 发光应用 silicon nanocrystals luminescence properties luminescence mechanism optical applications
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  • 1Dumke W P. lnterband transitions and maser action [ J ]. Phys Rev, 1962,127 ( 5 ) : 1559..
  • 2Canham L T. Silicon quantum wire array fabrication by electrochemical dissolution of wafer[J]. Appl Phys Lett, 1990, 57(10) : 1046.
  • 3Biteen J S, Tchebotareva A L, Polman A, et al. Controlled passivation and luminescence blue shifts of Isolated silicon nanocrystals[ J]. Mat Res Soc Syrup Proc,2003 ,770 (6) : 1621-1626.
  • 4Irrera A, Mifitello M, Pacifici D, et al. Eleetrolumineseence properties of SiOX layers implanted with rare earth ions [ J ]. Nuclear Instruments and Methods in Physics Research B, 2004,216:222.
  • 5Kim J H, Jean K A, Lee S Y. Formation mechanism and optical properties of nanocrystalline silicon in silicon oxide[ J]. J Appl Phys ,2005,98: 014303.
  • 6Kik P G, Polman A. Towards an Er-doped Si nanocrystal sensitized waveguide laser-the thin line between gain and loss[J]. Towards the First Silicon laser, 2003:383.
  • 7Watanabe K, Tamaoka H, Fujii M, et al. Excitation of Nd^3 + and Tm^3 + by the energy transfer from si nanocrystals [ J ]. Phys E, 2002,13 ( 1-2 ) : 1038.
  • 8De L T J, Soul A, Poneet A, et al. Optical properties of silicon nanocrystal LEDs[ J]. Physica E ,2003,16 ( 3-4 ) : 326 - 330.
  • 9Jaiswal S L, Simpson J T, Withrow S P, et al. Design of a nanoscale silicon laser[ J]. Appl Phys A, 2003, 77 ( 1 ) :57.
  • 10Proot J P, Delerue C, Allan G. Electronic structure and optical properties of silicon crystallites: Application to porous silicon [ J ]. Appl Phys Lett, 1992,61(16) :1948.

同被引文献10

  • 1Levalois M,Marie P.Damage induced in semiconductors by swift heavy ion irradiation[J].Nuclear Instruments and Methods in Physics Research B,1999,156:64-70.
  • 2Croitoru N,Gubbini E,Rattaggi M.Radiation damage induced in n-type silicon by Ions and neutrons[J].Nuclear Physics B (Proc.Suppl.),1999,78:657-661.
  • 3Kuhnke M,Fretwurst E,Lindstroem G.Defect generation in crystalline silicon irradiation with high-energy particles[J].Nuclear Instruments and Methods in Physics Research B,2002,186:144-150.
  • 4Poirier R,Avalos V,Dannefaer S,et al.Annealing mechanisms of divacancies in silicon[J].Physica B,2003,340-342:609-621.
  • 5Lay M D H,McCallum J C,Jagadish C.Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon[J].Physica B,2003,340-342:748-751.
  • 6Poirier R,Avalos V,Dannefaer S,et al.Divacancies in proton irradiated silicon:comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation[J].Nuclear Instruments and Methods in Physics Research B,2003,206:85-89.
  • 7Hallen A,Hakansson P,Keskitalo N,et al.Vacancy related defect profiles in MeV cluster-ion irradiated silicon[J].Nuclear Instruments and Methods in Physics Research B,1995,106:233-236.
  • 8Simoen E,Claeys C,Gaubas E,et al.Impact of the divacancy on the generation-recombination properties of 10 MeV proton irradiated float-zone silicon diodes[J].Nuclear Instruments and Methods in Physics Research A,2000,439:310-318.
  • 9Coutinho J,Jones R,Oberg S,et al.The formation dissociation and electrical activity of divacancy-oxygen complexes in Si[J].Physica B,2003,340-342:523-527.
  • 10马鹏飞,阮永丰,贾敏,李文润,张宇晖,张守超,王丹丽.中子辐照Al_2O_3的缺陷及退火恢复研究[J].硅酸盐通报,2009,28(3):407-410. 被引量:1

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