Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor

Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor

下载PDF

导出

摘要 Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology,simulating results show that the new structure device has higher signal-to-noise ratio,wider output swing,wider dynamic range and faster readout speed. Presented was an optimum designed CMOS active pixel sensor. In this sensor, used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor. Compared with traditional active pixel sensor under the same condition based on 0.25 μm CMOS technology, simulating results show that the new structure device has higher signal-to-noise ratio, wider output swing, wider dynamic range and faster readout speed.

作者 ZENG Yun ZHANG Guo-liang LI Xiao-lei WANG Tai-hong

机构地区 School of Physics and Microelectronics Science First Aeronautic College of Air Force

出处《Semiconductor Photonics and Technology》 CAS 2008年第1期65-68,共4页 半导体光子学与技术（英文版）

基金 Hunan Provincial Natural Science Foundation of China(05JJ30115)

关键词 APS restoration transistor low voltage APS 复位晶体管低电压传感器

分类号 TN361 [电子电信—物理电子学]

引文网络
相关文献

参考文献8

1Tedde S,Zaus E S,Fürst J,et al.Active pixel concept combined with organic photodiode for imaging devices[J].IEEE Electron Device Letters,2007,28(10):893-895.
2Lai C H,King Y C,Huang S Y.A 1.2-V 0.25-/spl mu/m clock output pixel architecture with wide dynamic range and self-offset cancellation[J].IEEE Sensors Journal,2006,6(2):398-405.
3Philipp R M,Etienne-Cummings R.A 1 V current-mode CMOS active pixel sensor[J].Circuits and Systems,IEEE International Symposium on 23-26 May 2005,4 771-4 774.
4Shen C,Xu C,Chan M,et al.Low voltage CMOS active pixel sensor design methodology with device scaling considerations[A].Electron Devices Meeting Proceedings,2001 IEEE Hong Kong,China,2001,21-24.
5Philipp R M,Etienne-Cummings R.A 1 V current-mode CMOS active pixel sensor[J].Circuits and Systems,2005,5:4 771-4 774.
6Xu C,Ki W H,Chan M.A low-voltage CMOS complementary active pixel sensor(CAPS) fabricated using a 0.25 μm CMOS technology[J].IEEE Electron Device Letters,2002,23(7):398-400.
7Robert S,Bedabrata P,Cunninggham T J,et al.Advances in ultra-low power,highly integrated,active pixel sensor CMOS imagers for space and radiation environments[J].SPIE,2002,4 547:1-5.
8JI Hong-hao,Abshire P A.A CMOS image sensor for low light applications.Circuits and Systems[J].Proceedings,2006 IEEE International Symposium on 21-24 May 2006,1 651-1 654.

1膜混合集成电路、MOS集成电路[J].电子科技文摘,2002,0(8):18-18.
2李晓磊,曾云,张国樑,彭琰,王太宏.基于0.25μm工艺的低压有源像素传感器研究[J].传感器与微系统,2008,27(6):15-17. 被引量：1
3Yi Xianrong.IPO Resumptions Signal Stock Market Restoration[J].Beijing Review,2015,58(47):40-40.
4陈凡胜,朱鸿泰,孙胜利.CMOS ROI技术在星敏感器上的应用[J].红外技术,2006,28(6):361-364. 被引量：4
5刘洋,田华阳.用于高分辨率Si-PIN探测器的低噪声电荷灵敏前置放大器的研制[J].中国原子能科学研究院年报,2012(1):253-254.
6FU Xian-song,YAO Su-ying,YUAN Yi-dong,XU Jiang-tao,DING Ke,YAN Kun-shan.Novel Logarithmic Active Pixel Sensor with High Dynamic Range and High Output Swing[J].Semiconductor Photonics and Technology,2008,14(3):153-157.
7计算机科学数学基础[J].电子科技文摘,2002,0(12):100-102.
8徐洁,郭星廷,赵继东.A Pre-Segmented Sharing Recovery Scheme for MPLS/GMPLS[J].Journal of Electronic Science and Technology of China,2004,2(4):53-59.
9季中恒,来卫国.共享备份通路策略在基于GMPLS的WDM网络中的应用分析[J].光通信技术,2006,30(6):43-45.
10王岩飞.A NEW ITERATIVE SIGNAL RESTORATION METHOD[J].Journal of Electronics(China),1992,9(2):181-186.

Semiconductor Photonics and Technology

2008年第1期

浏览历史

内容加载中请稍等...

Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor

参考文献8

相关作者

相关机构

相关主题

浏览历史