摘要
提出了一种多频带低噪声放大器的设计方法,可用于集成多个频段于一部终端的通讯设备.它不同于以往的电路结构,而是由共栅极作为输入,与一个共源极MOS管构成两级放大器,并通过使用2 bit的控制信号控制电路中的MOS开关,以调节电路工作在900 MHz、1.7 GHz和2.4 GHz等三个不同的频带.电路使用先进的90nm工艺库进行仿真,结果显示各频带的增益均大于16 dB,噪声系数小于1.7 dB,三阶交调点IIP_3和1 dB增益压缩点分别大于-2.5 dBm和-15.5 dBm,电路同时具备了扩展并包含更多频带的能力.
A new approach for the design of low noise multi-band amplifiers is given. Different from previous works, it uses a common-gate input stage cascaded with an inductively degenerated common-source stage. By using a 2 bit signal to control CMOS switches, the operating frequency can be changed from 900MHz to 1.7GHz and 2.4GHz. Simulated in advanced 90nm technology, for all operating bands, the LNA exhibits： gain 〉 16 dB, noise figure 〈 1.7dB, IIP3 〉 - 2.5 dBm and ldB gain compression point〉 - 15.5 dBm. Furthermore, this schematic shows a potential of being extended to include more frequency bands.
出处
《微电子学与计算机》
CSCD
北大核心
2008年第6期9-13,共5页
Microelectronics & Computer
