摘要
利用溶胶-凝胶法制备了不同Mn质量分数（0%-7%）的GaMnN粉体样品。经XRD检测所有样品均为六角纤锌矿结构，没有发现第二相，而且晶格常数随Mn质量分数的增加而增加。光致发光谱（PL）结果显示，紫外发光峰P1为GaN来源于带间发射的本征发光峰，且随着Mn质量分数增加略有红移，说明GaN的带隙变窄。XPS谱证明Mn离子处于＋2价。磁性测量显示，所有掺Mn的样品在5 K温度下均为顺磁性，居里-外斯温度为负值，表明样品中最近邻Mn离子之间存在着很强的反铁磁相互作用。
GaMnN powders with Mn mass fraction from 0 % to 7 % are prepared by the sol-gel method. The structural characteristics of Mn doped GaN powders was studied by X-ray diffraction （XRD）. It indicates that all samples are hexagonal wurtzite structure without any secondary phases. The lattice constant calculated from XRD results increases linearly with the increasing of Mn mass fraction. Photoluminescence spectra of all samples show redshift in the peak position of the UV PL （PI） with the increasing of Mn doping, indicating that the band gap getts narrow. XPS measurement shows that the doped Mn ion in （Ga, Mn） N films is in the divalent state. Magnetism measurements reveal that all samples are paramagnetism at 5 K, and Curie-Weiss temperature is negative.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第6期483-487,共5页
Semiconductor Technology
基金
国家自然科学基金项目(10774037)
河北省自然科学基金项目(E2007000280)
