期刊文献+

印制电路板用铝硼硅酸盐玻璃结构与介电性能 被引量:5

Structure and dielectric properties of aluminoborosilicate glass applied for printed circuit board
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摘要 通过在CaO-Al2O3-B2O3-SiO2玻璃系统中,用氧化硼逐渐替代氧化钙,研究了玻璃介电性能的变化,采用红外光谱和差示扫描量热仪分析了玻璃结构的变化。结果表明:随氧化硼含量增大,玻璃转变温度tg先降低后升高,样品的密度值从2.678降低至2.363g/cm3;室温下,1MHz时εr从6.66降低至5.38,而tanδ从1.71×10–3降低至1.25×10–3。 By IR patterns and DSC, the dielectric properties, εr and tan δ, and structure were investigated as a function of boron oxide content, which replaced calcium oxide in aluminoborosilicate glasses. The results show that the glass transition temperature value tg decreases first then increases with boron oxide content increasing; the values of densities decrease from 2.678 to 2.363 g / cm^3; the values of εr decrease from 6.66 to 5.38; and the values of tan j decrease from 1.71×10^-3 to 1.25×10^-3 at 1 MHz.
出处 《电子元件与材料》 CAS CSCD 北大核心 2008年第5期59-61,64,共4页 Electronic Components And Materials
基金 山东省自然科学基金资助项目(No.Y2007F04) 山东省科技攻关计划资助项目(No.2006GG2203008)
关键词 无机非金属材料 铝硼硅酸盐玻璃 介电性能 non-metallic inorganic material aluminoborosilicate glass dielectric properties
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参考文献15

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二级参考文献7

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