摘要
对等离子体增强化学汽相起积（PECVD）法制成SiOxNy薄膜组成的MIS结构样品，由集成测试系统测量Ⅰ－Ⅴ特性，用晶体管特性图示仪测试击穿行为。分析研究了该薄膜的Ⅰ－Ⅴ特性和击穿机理，探讨了膜的击穿电场及其随混合气体比例、反应空气压、衬底工作温度的变化关系。
For the MIS structure sample composed of SiOxNy thin film fabricated by Plasma Enhanced Chemical Vapour Deposition (PECVD) method, the I-V characteristic was measured by an integrated measurement system and the breakdown behavior was tested with transistor curve tracer. The I-V characteristic and breakdown mechanism of the thin film were analysed and investigated. The film breakdown field and relationships of the breakdown field with the mixture gas proportion, the chamber pressure and the substrate temperature were explored.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第4期394-398,共5页
Research & Progress of SSE
基金
国家自然科学基金
广东省自然科学基金资助课题
关键词
等离子体增强化学汽相淀积
介质膜
Ⅰ-Ⅴ特性
击穿机理
Plasma Enhanced Chemical Vapour Deposition
Dielectric Film
I-V Characteristic
Breakdown Mechanism
