摘要
In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes （LDs） by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs（110） surface. The optimum passivation conditions obtained are 60-W radio frequency （RF） power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-eoatings, the catastrophic optical damage （COD） threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of （NH4）2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than （NH4）2Sx solution wet-passivated treatment.
In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes （LDs） by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs（110） surface. The optimum passivation conditions obtained are 60-W radio frequency （RF） power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-eoatings, the catastrophic optical damage （COD） threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of （NH4）2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than （NH4）2Sx solution wet-passivated treatment.
基金
the National Natural Science Foundation of China under Grant No.60477010 and 60476026
