摘要
通过对波长1.3μm InGaAsP/InP的半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。
The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of 1.31μm InGaAsP/InP laser with semiconductor power amplification. The transmissivities of cavity faces have been increased from 69% and 32.6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device, output power of laser and operating lifetime have been improved.
出处
《激光与红外》
CAS
CSCD
北大核心
2008年第3期214-215,共2页
Laser & Infrared
关键词
半导体
功率放大
耦合
减反射膜
semiconductor
power amplification
coupling
antireflection films
