摘要
针对热CVD法制备的无定形超微Si3N4粉体表面富含N—H键的特性,以RuCl3为钌源,采用醇热还原法对Si3N4粉体进行了钌包覆。并利用傅立叶红外光谱(FTIR)、紫外-可见光谱分析(UV-Vis)、扫描电子显微镜(SEM)和能谱仪(EDS)等检测手段对所得样品的结构和形貌进行了表征。研究结果表明,在Si3N4表面包覆了一层钌颗粒。并对钌包覆层的形成机理进行了讨论。
For the property of full of N--H bonds on the surface of the amorphous Si3N4 which is prepared by Termal-CVD, the surface of ultrafine-powder silicon nitride is modified by using alcohothermal process, and RuCl3 as the source of Ru. The results of FTIT, SEM, EDS and UV-Vis show that there is a layer of equality and fine Ruthenium on the surface of Silicon Nitride. Further more, this paper also discusses the mechanism of ruthenium layer growing.
出处
《浙江理工大学学报（自然科学版）》
2008年第2期195-198,共4页
Journal of Zhejiang Sci-Tech University(Natural Sciences)
基金
浙江省自然科学基金资助项目(111383A4D04238)
关键词
氮化硅
包覆
钌
醇热还原
silicon nitride
coating
ruthenium
alcohothermal
