摘要
当硬盘驱动器的磁头飞高降至5nm以下时,磁头与磁盘间的分子间作用力不能忽略。以皮米磁头和飞米磁头为模型,模拟了分子间作用力对飞高低于5nm的磁头总承载力的影响。模拟结果表明,分子间作用力改变了飞高低于5nm的磁头承载特性。分子间吸引力使总承载力减小,甚至出现负值,以致使磁头失去承载能力。当飞高进一步降低时,分子间斥力的作用显现出来。由于分子间引力和斥力的作用范围不同,磁头有一段失去承载能力的临界飞高区间。磁头的尺寸因子不同,临界飞高区间也有差别。
As flying height is reduced to less than 5nm, the intermolecular forces between the two solid surfaces of the slider and the disk can not be ignored. A pico slider and a femto slider, whose flying height range from 0 to 5nm, are used in this study to model the effect of the intermolecular forces on the total force. It is found that the intermolecular forces change the load capacity of the slider flying below 5nm. Due to the presence of the intermolecular attractive force, the total load decreases and even be- comes negative, which means the slider can not sustain any load. When the flying height decreases further, the influence of the repulsive portion of the intermolecular force on the total force becomes dominative. Because of the dissimilar effective ranges of attractive and repulsive intermolecular forces, sliders have a critical flying height clearance in which the slider cannot sustain any load. With the slider＇s form factor being different, the critical flying height clearance is not the same.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2008年第1期93-97,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助项目(50505007)
关键词
磁头
分子间作用力
飞高
slider
intermolecular force
flying height
