摘要
从ＲＭＯＳ器件的导通电阻模型出发，通过分析导通电阻与栅氧化层厚度和槽深间的定量关系，得出：减薄栅氧化层厚度或增加槽的深度，可以降低器件的导通电阻和器件的反向耐压；反之，器件的导通电阻和反向耐压增加。同时，浅槽结构比深槽结构更理想。文中还讨论了器件的版图布局。结果表明，条形结构优于元胞结构。
Based on the RMOS on-resistance model, the quantitative relation of on-resistance versus oxide thickness and trench depth is analyzed.Tt has been found that as the gate oxide thick- ness decreases or the trench depth increases , on-resistance of the device would decrease and the re- verse breakdown voltage also decreases , and vice versa. The shallower trench Is shown to be bet- ter than deeper trench. Layout and placement of the device are discussed. It is demonstrated that the Stripe structure is superior over the cell structure.
出处
《微电子学》
CAS
CSCD
北大核心
1997年第4期217-223,共7页
Microelectronics
