摘要
SG方法内在地具有侧风扩散现象。为了分析它对半导体器件模拟结果的影响，文中提出了一种精度高于SG方法的离散方法，然后将该方法插入到MINIMOS4．0中。离散方程采用ILUCGS方法求解。数值结果表明，半导体器件模型中的漂移项必须用高精度的离散方法离散，否则得到的数值结果不能体现物理模型的真实解。
The crosswind diffusion is inherent in the SG scheme. In order toanalyze its influence on the results of semiconductor device simulations, this paperdevelops a new discretizaton scheme with higher accuracy than the SG scheme andsubstitutes it into MINIMOS 4.0. The discretization equations are solved by theILUCGS scheme. Numerical results show that the drift term must be discretized bythe high accurate schemes, or the corresponding results can not represent the realistic solution of the physical model.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第3期272-280,共9页
Research & Progress of SSE
关键词
半导体器件
模拟
侧风扩散
SG方法
Semiconductor Device Simulations, Crosswind Diffusion, SG Scheme MINIMOS4.0
