摘要
采用0.35μm SiGe BiCMOS工艺设计了用于S波段雷达接收机前端电路的低噪声放大器。对于现代无线接收机来说,其动态范围和灵敏度很大程度上都取决于低噪声放大器的噪声性能和线性度。相对于CMOS工艺来说,SiGe BiCMOS工艺具有更高的截止频率、更好的噪声性能和更高的电流增益,非常适合微波集成电路的设计。该低噪声放大器采用三级放大器级联的结构以满足高达30 dB的增益要求。在5 V的电源电压下,满足绝对稳定条件,在3 GHz^3.5 GHz频段内,功率增益为34.5 dB,噪声系数为1.5 dB,输出1 dB功率压缩点为11 dBm。
This paper introduces a low noise amplifier for a 3 GHz to 3.5 GHz radar receiver, by using AMS 0.35μm SiGe BiCMOS technology. The dynamic range and sensitivity of modern wireless receiver heavily depends on the noise and linearity of the low noise amplifier. Compared with CMOS process, SiGe BiCMOS process demonstrates higher cut-off frequency, better noise performance and higher current gain, which makes it quite suitable for design of microwave IC. The LNA consists of three stage amplifier units to achieve a power gain higher than 30 dB. In the frequency range of 3 GHz to 3.5 GHz and under a supply voltage of 5V, the simulation results show a power gain of 34.5 dB, a noise figure of 1.5 dB, an output P1dB of 11 dBm.
出处
《电子工程师》
2008年第2期35-38,共4页
Electronic Engineer
