摘要
提出了一种基于耗尽型工艺的单节锂离子电池充电保护芯片设计。阐述了此芯片的设计思想及系统结构,并对芯片关键电路的独特设计方法及原理进行了详细分析,特别是基准电路和偏置电路,利用耗尽型工艺使电路具有非常低的电源启动电压和功耗。在Hspice中仿真了采用0.6μm的n阱互补金属氧化物半导体(CMOS)工艺制作全局芯片的测试结果。验证了此芯片具有过电压检测、过电流检测、0 V电池充电禁止等功能,可用于单节锂离子电池充电的一级保护。
A kind of charging protection chip based on the depletion process for single lithium battery was designed. The designing method, the function diagram of the chip and the detailed design principle of key circuits, especially its benchmark circuit and bias circuit, were explained. The circuit has very low power voltage and low power consumption by using of a deleption process. All the chips with 0.6 μm n-well complementary metal-oxide-semiconductor （CMOS） process were simulated by Hspice. The result shows that the chip has overvoltage detection, overcurrent detection and 0 V battery charging inhibition functions, can be used as the first protection IC for single lithium battery pack.
出处
《微纳电子技术》
CAS
2008年第2期118-122,共5页
Micronanoelectronic Technology
基金
福建省青年科技人才创新项目(2007F3066)
关键词
耗尽型
互补金属氧化物半导体
低功耗
电压源
过充电
过放电
depletion
complementary metal-oxide-semiconductor （CMOS）
low power consumption
voltage source
overcharge
overdischarge
