摘要
将化学机械抛光(CMP)技术引入到镁合金片(MB2)的抛光中,打破过去镁合金以单一化学或机械加工为主的加工手段,用自制的抛光液对镁合金片进行抛光实验。结果发现,抛光液中加入双氧水易产生胶体,不利于抛光的进行,因此提出无氧化剂SiO2碱性抛光。同时分析了镁合金的抛光机理,抛光中压力、转速和抛光液流量参数对抛光过程的影响,利用Olympus显微镜对抛光前后镁合金表面进行观察,通过合理控制工艺参数,能够得到较佳的镁合金抛光表面,远优于单一的机械加工,为镁合金抛光工艺和进一步研究抛光液的配比奠定了基础。
The chemical-mechanical polishing （CMP） technology was introduced into Mg alloy surface ultra-precision process and the single chemical or mechanical process was broken through. The self-made slurry was used to make polishing experiment for Mg alloy. The result shews that it is difficult to carry out polishing for the generated colloid during CMP process, if the slurry contains H2O2. As a result, without the oxidant of SiO2 alkali polishing was put forward. At the same time, the polishing mechanism of Mg alloy was investigated. The effect of pressures, rotation and flow rates of slurry process on the polishing were analyzed. The Olympus microscope was used to observe the surface of Mg alloy. By reasonable control of process parameters, the better Mg alloy surface was gained, which is far superior to the single machining.These are the basis for the Mg alloy CMP process and further study on the content of polishing slurry.
出处
《微纳电子技术》
CAS
2008年第2期114-117,122,共5页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(10676008)
