摘要
近年来，微晶硅（μc-Si：H）被认为是一种制作TFT的有前景的材料。采用PECVD法，在低于200℃时制作了微晶硅TFTs，其制作条件类似于非晶态TFTs。微晶硅TFTs器件的迁移率超过了30cm^2／Vs，而阈值电压是2．5V。在长沟道器件（50-200μm）中观测到了这种高迁移率。但对于短沟道器件（2μm），迁移率就降低到了7cm^2／Vs。此外，该TFTs的阈值电压随着沟道长度的减少而增大。文章采用了一种简单模型解释了迁移率、阈值电压随着沟道长度的缩短而分别减少、增加的原因在于源漏接触电阻的影响。
Microcrystalline silicon （μc-Si：H） has recently been proven to be a promising material for thinfilm transistors （TFTs）. We present μc-Si： H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200℃ in a condition similar to the fabrication of amorphous silicon TFTs. The μc-Si： H TFTs exhibit device mobilities exceeding 30 cm^2/Vs and threshold voltages in the range of 2.5 V. Such high mobilities are observed for long channel devices （50-200 μm）. For short channel device （2 μm）, the mobility reduces to 7 cm^2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contact resistance.
出处
《电子器件》
CAS
2008年第1期109-114,共6页
Chinese Journal of Electron Devices
关键词
薄膜晶体管
TFT
微晶硅
大面积电子
Thin-Film Transistors
TFTs
Microcrystalline Silicon
Large Area Electronics
