摘要
研究了多孔硅的光电化学特性和溶液中的光致电荷转移机理．由P型单晶硅制备的多孔硅具有P型半导体的光电性质，且光电流响应高于单晶硅．由于多孔硅表面态能级对光致电荷的陷阱作用，多孔硅呈现了独特的光电流响应和光致电荷转移性质．
The charge transfer and photoelectric properties of porous silicon were investigat-ed by photoelectrochemical techniques. The results show that the porous silicon fabricated bysingle crystalline p-Si exhibits photoelectric properties of p-type semiconductors with a high-er photocurrent than the original silicon. Due to the unique surface structure, the porous sili-con has a particular photocurrent spectrum.This is attributed to the photocharge-trappingeffect of surface states in the porous silicon.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第4期621-624,共4页
Chemical Journal of Chinese Universities
基金
国家自然科学基金
关键词
多孔硅
光电流
光电化学
电荷转移
P型
单晶型
Porous silicon, Photocurrent, Photoelectrochemistry, Charge transfer
