摘要
采用直流磁控溅射的方法,在玻璃衬底上沉积了Zn0.93Mn0.07O薄膜,研究了氧分压对薄膜结构及吸收性能的影响。X射线光电子能谱(XPS)测试结果表明,Mn2+取代了ZnO中的大部分Zn2+,但还掺杂有少量的MnO2分子。X射线衍射测试(XRD)结果显示,Zn0.93Mn0.07O薄膜都具有高度的C轴择优取向,在氧分压为0.4时,薄膜具有最小的半高宽及最大的晶粒尺寸。由于伯斯坦-莫斯效应,Zn0.93Mn0.07O薄膜光吸收跃迁过程只能在价带态和费米能级附近及以上的导带空态之间发生,与纯ZnO薄膜吸收谱线相比,吸收边产生了蓝移,同时还伴随有导带尾跃迁的发生。研究表明,这是由3d5多重能级的d-d跃迁而引起的。经过计算,氧分压为0.4时,Zn0.93Mn0.07O薄膜的禁带宽度是最大的,这可能是由交换作用的减弱而引起的。
Zn0.93Mno.07O thin film was grown on glass by DC magnetron sputtering, and the influences of oxygen partial pressure on the structure and absorption property of Zn0.93Mn0.07O film were investigated. XPS results reveal that the divalent Mn^2＋ ions take the place of most Zn^2＋ ions in ZnO lattice with few MnO2 doped. （XRD results indicate that the films are highly C-axis oriented, with minimum half high width and maximum crystal grain at the oxygen partial pressure of 0.4. Owing to Burstein-Moss （B-M） effect, the absorption spectrum shows that the blue-shift absorption edge transition happens at valence band level and conduction vacant band near or above the Fermi level, with the absorption band tailing which attributes to the d-d transitions of tetrahedral Mn^2＋ between the crystal-field-split 3d^5 multiple energy level. The calculation result shows that band-gap is the widest when R is 0.4, caused by the weakness of exchange interaction.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第2期113-116,共4页
Semiconductor Technology
基金
国家自然科学基金资助项目(60571043)
中南大学研究生教育创新项目(062510029)
关键词
锰掺杂氧化锌薄膜
磁控溅射
氧分压
吸收特性
Mn doped ZnO thin films
magnetron sputtering
oxygen pressure
absorption property
