摘要
为了将铁电薄膜与半导体器件集成，发展了新的铁电薄膜制备技术。快速退火（ＲＴＰ）由于可以降低铁电薄膜的制备温度、改善铁电薄膜与半导体器件兼容性质，因而倍受人们的关注。用多离子束反应共溅射装置在室温下制备了ＰｂＴｉＯ３薄膜，样品经ＲＴＰ装置作退火处理，发现ＰｂＴｉＯ３薄膜可以在多晶或非晶层上生长。
The new fabrication methods of ferroelectric (FE) thin films have developed in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has received special attention, because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The PbTiO 3 thin film samples were prepared by a multi ion beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post deposition annealing in a RTP system. It was found that PbTiO 3 thin film could grow on amouphous or polycrystal interfacial layer and the PbTiO 3 thin films annealed by RTP showed the prefered and textures.
出处
《电子显微学报》
CAS
CSCD
1997年第4期437-440,共4页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金
中国工程物理研究院基金
