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Metropolis蒙特卡罗模拟湿法腐蚀算法研究及应用 被引量:3

A Metropolis Monte Carlo Simulation Approach for Anisotropic Wet Etching and Its Applications
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摘要 探讨了Metropolis蒙特卡罗方法模拟硅微加工各向异性湿法腐蚀仿真算法.在台阶流动(step flow)模型上引入了腐蚀概率方程,确定了蒙特卡罗转移概率.通过对不同相位晶面(vicinal surface)在掩模下的腐蚀模拟对提出的方法进行了校验分析,解释了蒙特卡罗法处理复杂晶面的原理和过程.模拟测试中,仿真程序能正确地再现不同晶向腐蚀速率特性以及凸角腐蚀的结构形态,经过与目前报道的元胞自动机以及其他种类蒙特卡罗法比较分析,模型具有较高的仿真效率和结果精度.最后,该系统模拟一个实际的微加速度传感器设计中的凸角补偿问题,在震动岛块的掩模补偿设计中验证了模型的正确性. A simulation model based on Metropolis Monte Carlo for anisotropic etching is presented. The step flow model of kink propagation is introduced in the modeling process of the simulation. For the calculation of the transaction probability of the Monte Carlo method, the removal probability function is set forth by using the nearest-neighbor bond-counting model. The simulation is car- ried out on different vicinal surfaces to verify the efficiency of the model. Through understanding the kink propagation,the velocity of high Miller-index facets can be explained. Compared with reported CA and other Monte Carlo methods, this model shows higher efficiency and accuracy in simulation. Finally,compensation for convex corners of the micro accelerometer is perfor/ned, and the visualization result of simulation agrees well with the experimental results.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期183-188,共6页 半导体学报(英文版)
基金 国家高技术研究发展计划(批准号:2006AA04Z351) 国家自然科学基金(批准号:50675033)资助项目~~
关键词 Metropolis蒙特卡罗 单晶硅 各向异性 湿法腐蚀 Metropolis Mont Carlo single crystal silicon anisotropic wet chemical etching
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参考文献10

  • 1Zhu Z, Liu C. Micromachining process simulation using a continuous cellular automata method. Journal of Microelectro-Mechanical Systems,2000,9(2) :252.
  • 2周再发,黄庆安,李伟华,邓伟.考虑高指数晶面的体硅腐蚀模拟新CA模型[J].Journal of Semiconductors,2007,28(5):731-736. 被引量:2
  • 3Gosalvez M A. Nieminen R M. Anisotropic wet chemical etching of crystalline silicon: atomistic Monte-Carlo simulations and experiments. Appl Surf Sci, 2001,178( 1 -4) : 7.
  • 4Wakayama T, Kobayashi T, lwata N, Micro-fabrication of silicon/ ceramic hybrid cantilever for atomic force microscope and sensor applications. Sensors and Actuators A, 2006,126 ( 1 ) : 159.
  • 5Gosalvez M A,Foster A S,Nieminen R M. Multiscale modeling of anisotropic wet chemical etching on crystalline silicon. Europhysics Letters,2002,6(30) :467.
  • 6Schroder H,Obermeier E. Convex corner undercutting of { 100} silicon in anisotropic KOH etching:The new step-flow model of 3- D structuring and first simulation results. Journal of Microelectromechanical Systems,2001,10(1) ,88.
  • 7Akis R, Ferry D K, Musgrave C B. Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface. Physica E: Low-Dimensional Systems and Nanostructures,2003,19 (1/2) : 183.
  • 8Van Veenendaal E, Nijdam A J, Van Suchtelen J. Simulation of anisotropic wet chemical etching using a physical model. Sensors and Actuators A, 2000,84 (3) : 324.
  • 9Gosalvez M A, Foster A S, Nieminen R M. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon. Appl Surf Sci, 2002,202 (3/4) : 160.
  • 10Mayer G K,Offereins H L,Sandmaier H,et al. Fabrication of non underetched convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micromechanic. Elements J Eleetro-Chem Soc, 1990,137(12):3947.

二级参考文献10

  • 1姜岩峰,黄庆安.硅各向异性腐蚀的原子级模拟[J].Journal of Semiconductors,2005,26(3):618-623. 被引量:5
  • 2陈杰智,李泠,施毅,刘明,郑有炓.基于元胞自动机理论的硅各向异性腐蚀模型[J].Journal of Semiconductors,2005,26(8):1671-1675. 被引量:1
  • 3周再发,黄庆安,李伟华,王涓,孙岳明.元胞自动机方法模拟硅的各向异性腐蚀研究[J].固体电子学研究与进展,2006,26(1):128-133. 被引量:1
  • 4周再发,黄庆安,李伟华,王涓,孙岳明.硅各向异性腐蚀模拟的3-D连续CA模型研究[J].仪器仪表学报,2006,27(6):551-555. 被引量:3
  • 5Than O, Buttgenbach S. Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model. Sensors and Actuators, 1994, A45: 85
  • 6Hubbard T J. MEMS design: the geometry of silicon micromachining. Ph D Dissertation, California: California Institution of Technology, 1994
  • 7Marchetti J, He Y, Than O, et al. Efficient process development for bulk silicon etching using cellular automata simulation techniques. SPIE' s Symposium on Micromaching and Microfabrication, Micromachinged Devices and Components,Santa Clara, USA, 1998 : 1
  • 8Zhu Z, Liu C. Micromachining process simulation using a continuous cellular automata method. Journal of Microelectromechanical Systems, 2000,9 (2) : 252
  • 9Zhou Z F,Huang Q A, Li W H,et al. A 3-D simulator for silicon anisotropic wet chemical etching process based on cellular automata, Journal of Physics: Conference Series, 2006,34:674
  • 10Gosalvez M A,Nieminen R M,Kilpinen P,et al. Anisotropic wet chemical etching of crystalline silicon:Atomistic Monte-Carlo simulations and experiments. Appl Surf Sci, 2001,178 (1):7

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