摘要
利用低压金属有机物化学气相沉积技术,采用均匀掺杂和渐变Mg-δ掺杂方法,分别在氮化镓(GaN)和高温氮化铝(HT-AlN)模板上,生长了p型GaN外延材料.生长后,双晶X射线衍射和霍尔测试结果表明:HT-AlN模板上采用渐变Mg-δ掺杂方法生长的p型GaN材料,具有最好的晶体质量和电学性能.该p型GaN样品的(0002)面半峰宽值小至178″,其空穴氧浓度为5.78×1017cm-3.在对Cp2Mg/TMGa进行了优化试验后,p型GaN的空穴氧浓度被提高到8.03×1017cm-3.
Uniformity-doping and Mg-gradual-δ-doping p-type GaN epilayers are grown on HT-AIN/sapphire templates by metalorganic chemical vapor deposition （MOCVD）. Compared to those grown on GaN/sapphire templates, the Mg-gradual-δ-doping process and HT-AIN/sapphire template improve the crystal quality of p-type GaN epilayers and enhance the p-type performance. The double crystal X-ray rocking curve and the Hall measurement show a full-width at half-maximum of only 178＇ and the highest hole concen- tration of 5.78 × 10^17cm^-3 for the Mg-gradual-8-doping p-type GaN epilayers grown on HT-AIN/sapphire templates. Under the optimum ratio of Cp2 Mg/TMGa, the hole concentration of the p-type GaN epilayer is improved to 8. 03 × 10^17 cm^-3,
基金
重庆市科技攻关计划资助项目(批准号:2005AA4006-B7)~~
