摘要
以高纯乙硼烷(B2H6)为B源,采用化学气相沉积(CVD)方法在多晶Al2O3衬底上沉积B薄膜,然后在Mg蒸气中异位退火来制备MgB2超导薄膜。通过X射线衍射和MgB2超导薄膜的电阻-温度曲线,研究了先驱硼薄膜的质量对MgB2超导薄膜的影响。
The superconducting MgB2 thin films were prepared on Al2O3 polycrystalline substrates by a two-step ex-situ magnesium-diffusion method with the precursor boron thin films grown by CVD from B2H6. The effect of precursor boron thin films on superconducting MgB2 thin films was studied by X-ray diffraction analysis and resistance-temperature curve measurement.
出处
《低温工程》
CAS
CSCD
北大核心
2007年第6期51-53,58,共4页
Cryogenics
关键词
MGB2
超导薄膜
乙硼烷
化学气相沉积
纯度
superconducting MgB2 thin film
diborane
chemical vapor deposion
purity
