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Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer 被引量:2

Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer
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摘要 The organic tield effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm^2/V.s was tested at V.=70 V, and on/off radio up to 1.7×10^4.
出处 《Optoelectronics Letters》 EI 2007年第6期432-434,共3页 光电子快报(英文版)
基金 supported by the National Natural Science Foundationof China (60676033)
关键词 化合物晶体 绝缘栅 晶体管 聚酰亚胺 化合物晶体 绝缘栅 晶体管 聚酰亚胺
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