摘要
提出了一种部分耗尽SOI MOSFETs器件翘曲效应的一个温度模型。详细地分析了漏电流在不同温度下的导通机制。总的电流由两部分组成：一部分是上MOS的电流，另一部分是由下部的寄生三极管电流。漏电流的突然增加来源于浮体区电势的增加。在本模型还分析了浮体电势、阈值电压与温度的变化关系。
A temperature-dependent model for kink effect of partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed The current conduction mechanism with temperature is explored in detail. The total drain current consists of the top MOS current and the bottom parasitic bipolar junction transistor current. The sudden increase of drain current originates from the increasing potential of floating body region. In this model, the drain current, floating body potential and threshold voltage are also investigated under different temperatures.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A02期872-877,共6页
Journal of Functional Materials
基金
Project supported by Key Project of National Natural Science Foundation of China（50531060）
National Science Found for Distinguished Young Scholars of China（10525211）
National Natural Science Foundation of China（10572124
10472099）
Key Project of Scientific and Technological Department of Hunan Province （05FJ2005）, and the Open Project Program of Low Dimensional Materials ＆ Application Technology （Xiangtan University）, Ministry of Education, China （KF0602）.
