摘要
采用超声雾化热解法制备ZnO薄膜，对比分析了不同In含量的N-In共掺杂ZnO薄膜的显微结构，电学和光学性质。实验结果表明在N-In共掺杂条件下In的含量对ZnO薄膜的显微结构及性能有明显的影响。In的掺入使得ZnO中总体缺陷减少，晶粒外形更规则，C轴取向性更好。引入In能使ZnO更容易向P型转变；当前驱体溶液中In的比例〉0．03后，可以显著改善ZnO薄膜的电学性能和光学性能。
This research has prepared ZnO thin films with ultrasonic spry pyrolysis method. The morphology, crystal structure, electrical and optical characters of ZnO thin films with different doping were investigated. It is confirmed that the codoping of In made some rectifications to N-doped ZnO thin films＇ structures and characters. The results have shown that the codoping of In reduced the defects in ZnO, rendered the structure of ZnO more regular and stronger c-axis-orientated ZnO grain. Compared with N-doped ZnO thin films, N-In codoped ZnO becomes easier to be grown p-type film. With the increasing of the content of In to a certain value, the carder concentration increases and the direct-band-gap transition is enhanced.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A01期59-62,共4页
Journal of Functional Materials
基金
基金项目：教育部留学回国人员科研启动基金资助项目（教外司留[2005]546）
国家自然科学基金资助项目（40643018）
