摘要
目的比较炭疽杆菌芽孢与短小杆菌芽孢对电离辐射的抗力。方法采用配对设计和载体定量灭活试验法进行了试验研究。结果经照射剂量率为2651.2 rad的钴60照射处理,钴60γ射线照射杀灭炭疽杆菌芽孢的D10值为1.62,短小杆菌芽孢的D10值为1.51。经高能加速电子束照射处理后,其杀灭炭疽杆菌芽孢的D10值为2.23,短小杆菌芽孢的D10值为1.83。结论炭疽杆菌芽孢对电离辐射的抗力略强于短小杆菌芽孢。
Objective To compare the resistance of Bacillus anthracis spore and Bacillus pumilus spore to ionizing radiation. Methods Paired design and carrier quantitative germicidal test were used to carry out experimental study. Results After treatment with irradiation of 60^ Co γ - rays at a dose rate of 2651.2 rad, the Dl0 value for B. anthracis spores was 1.62 and that for Bacillus pumilus spores was 1.51. After treatment with irradiation of high -energy accelerated electron beam, the D10 value for B. anthracis spores was 2.23 and that for B. pumilus spores was 1.83. Conclusions The resistance of B. anthracis spores to ionizing radiation is slightly higher than that of B. pumilus spores.
出处
《中国消毒学杂志》
CAS
北大核心
2007年第6期493-495,共3页
Chinese Journal of Disinfection
关键词
电离辐射
钴60γ射线
电子束
炭疽杆菌
短小杆菌
ionizing radiation
60^ Co γ - rays
electron beam
Bacillus anthracis
Bacillus pumilus
