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高压无功补偿及谐波抑制装置设计 被引量:4

Design of HV reactive compensation and harmonic suppression equipment
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摘要 针对已有高电压无功补偿装置存在的不能对补偿电容进行有效保护、运行可靠性差、易造成谐波污染等不足,设计了一种集谐波检测、记忆、治理和过电压、超温度保护于一体,功能完善的新型高电压无功电容补偿装置。谐波检测、记忆电路的频率在150 Hz或250 Hz左右时,启动相应电路进行保护,并使运算放大器始终输出高电位,记忆指示灯永久性点亮。高电压滤波单元在工频状态时串联电抗器呈低阻抗,能量消耗小;出现谐波时,串联电抗器呈高阻抗,可限制电容电流的增加,当谐波超过允许值时,断开电力电容,对电容进行保护。当电压或温度超过设定值时,就会启动相应的过电压、超温度保护电路,对系统进行保护。该装置电路简单、运行安全可靠。 As the existing high voltage reactive compensation devices do not effectively protect their compensating capacitors,causing harmonic pollution and lower operational reliability,a device with comprehensive functions is designed,which integrates the harmonic detection,memory and control with the over-voltage and over-temperature protections. When the frequency is about 150 Hz or 250 Hz,the harmonic detection and memory circuit enables the relevant protective circuit,setting the output of operational amplifier high and the memory indicator lamp on. In normal working state,the serial reactor of the high voltage filtering unit presents low impedance with low energy consumption;when there are harmonics,the reactor presents high impedance to limit capacitor current;when harmonics are beyond the permitted values,the capacitor groups are switched off. When the voltage or temperature is over its setting point,the over-voltage and over-temperature protection circuit enables the relevant protective circuit. The device designed has simple circuits and runs reliably.
出处 《电力自动化设备》 EI CSCD 北大核心 2007年第11期101-103,共3页 Electric Power Automation Equipment
关键词 无功补偿 谐波记忆 自我保护 reactive compensation harmonic memory self-protection
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  • 1潘文,钱俞寿,周鹗.基于加窗插值FFT的电力谐波测量理论──(Ⅰ)窗函数研究[J].电工技术学报,1994,9(1):50-54. 被引量:179
  • 2孙士乾,叶受读.PARK变换与瞬时无功功率[J].浙江大学学报(自然科学版),1994,28(5):570-576. 被引量:10
  • 3[4]A kagi H,Knazaw a Y,Nabae A.Instantaneous reactive power compensators comprising switching devices without energy storage components.IEEE trans IA,1984,20(3).
  • 4LeeTH.CMOS射频集成电路设计[M](英文原版)[M].电子工业出版社,2002..
  • 5Nang Kan Leung,Mok K,Philip.A sub-1-V15-ppm/℃ CMOS bandgap voltage reference without requiring low threshold voltage device[J].IEEE Journal of Solid-state Circuits,2002:37(4);520-530.
  • 6Boni,Andrea.Op-amps and startup circuits for CMOS bandgap references with near 1-V supply[J].IEEE Journal of Solid-state Circuits,2002:37(10):1 339-1 343.
  • 7Banba Hironori,Shiga Hitoshi,Umezawa Akiza,et al.A CMOS bandgap reference circuit with sub-1-V operation[J].Journal of Solid-state Circuits,1999;34(5):670-674.
  • 8Crols J, Steyarert M S J. Switched-opamp: An approach to realize full CMOS switched-capacitor circuits at very low power supply voltages[J]. IEEE Solid-State Circuits, 1994, 29:936-942.
  • 9Baschirotto A, Castello R. A 1V 1. 8 MHz CMOSswitched-opamp SC filter with rail-rail output swing[J]. IEEE Solid-State Circuits, 1997,32:1979-1986.
  • 10Cheung V S L. A 1V 3.5mW switched-opamp quadrature IF circuitry for bluetooth receivers [J] . IEEESolid-State Circuits, 2003,38: 805-816.

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