摘要
A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30#m and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2 W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161 W when the laser is pumped with a 25 W diode laser operating at 976nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.
A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30#m and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2 W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161 W when the laser is pumped with a 25 W diode laser operating at 976nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.
基金
Supported by the National High-Technology and Development Programme of China under Grant No 2003CB314906, the Tianjin Natural Science Foundation Projects under Grant No 06YFJZJC00300, and the China Postdoctoral Science Foundation under Grant No 20060390666.
