摘要
自70年代液相外延得到迅速发展以来,在对短时间生长(1～30s)得到的亚微米异质外延层的丰富经验基础上,1982年以后,人们提出了LPE短时间生长机制的理论分析。但迄今为止,国内外对LPE生长接触后极短时间的,特别是初始生长速率的变化行为的研究仍是猜测性地定性分析。研究异质界面问题最有效、最可信的方法是Auger深度离子剥离分析,它可以在2nm以下的精度显示异质固态结合处各元素沿生长距离的分布。
The element distribution of InGaAs/InP heterogeneous interface of LPE is shown by Auger Depth Spectra(ADS), and the precision is about 20nm. The results calculated show that the conventional diffusion analysis is not suitable for practice. According to the diffusion & mass conservation of the interface, the element distribution can be expressed by the exponential function which is calculated by trial value. The results show that the growth speed is about 10~8nm/s at the beginning and 5×10~5nm/s at the end of the growth. The transition layer thickness is about 50nm and its formation time is less than 1ms.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1989年第4期130-134,共5页
Journal of Southeast University：Natural Science Edition
关键词
试探值α
异质界面
INGAAS/INP
liquid phase epitaxiae growth, heterogeneous, Auger electron spectrometry / transition layer
