GaN MOS-HEMT Using Ultrathin Al_2O_3 Dielectric with f_(max) of 30.8GHz 被引量：1

f_(max)为30.8GHz的超薄Al_2O_3绝缘栅GaN MOS-HEMT器件(英文)

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摘要 We report on a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） using atomic-layer deposited （ALD） A1203 as the gate dielectric. Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced. The drain current of this 1/~m gate- length MOS-HEMT can reach 720mA/mm at ＋ 3.0V gate bias. The unity current gain cutoff frequency and maxi- mum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively. 报道了一种利用原子层淀积(ALD)生长超薄(3.5nm)Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).新型AlGaN/GaNMOS-HEMT器件栅长1μm,栅宽120μm,栅压为+3.0V时最大饱和输出电流达到720mA/mm,最大跨导达到130mS/mm,开启电压保持在-5.0V,特征频率和最高振荡频率分别为10.1和30.8GHz.

作者郝跃岳远征冯倩张进城马晓华倪金玉

机构地区西安电子科技大学宽禁带半导体材料与器件教育部重点实验室

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第11期1674-1678,共5页 半导体学报（英文版）

基金国家重点基础研究发展计划资助项目(批准号:51327020301)~~

关键词 A1GAN/GAN MOS-HEMT ultrathin A1203 A1GaN/GaN MOS-HEMT 超薄Al2O3

分类号 TN386.1 [电子电信—物理电子学]

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引证文献1

1黄俊,张宗贤,黄峰,魏珂,刘新宇,郝跃,张进诚.采用AlN绝缘栅的AlGaN/GaN凹栅槽结构MISHEMT器件[J].科技创新导报,2012,9(4):6-8.

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2刘林杰,岳远征,张进城,马晓华,董作典,郝跃.Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究[J].物理学报,2009,58(1):536-540.
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Journal of Semiconductors

2007年第11期

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