摘要
在CdTe与金属背电极间形成稳定的低电阻接触,有助于提高CdTe太阳电池性能。采用硝酸-冰乙酸腐蚀CdTe薄膜并用真空蒸发法沉积铜背接触层,制备CdTe太阳电池。结果表明,化学腐蚀后在膜面生成了富碲层,硝酸-冰乙酸腐蚀为各向同性刻蚀。对背接触层进行优化退火处理,获得转化效率11.75%的CdTe太阳电池。
Forming a low resistance contact to CdTe thin films is a key issue for successful improvement of the performance of CdTe solar cells. The CdTe thin films were etched with nitric -acetic (NA) acid and a Cu back contact layer was deposited onto the etched CdTe surface, then the CdTe solar ceils were fabricated. The results indicated that the nitric-acetic acid pretreatment forms a highly conductive Te layer on the back surface of the CdTe thin films and it is an isotropic etching. An efficiency of 11.75% for CdTe solar ceils was obtained when the back contact layer was annealed under optimum conditions.
出处
《四川大学学报(工程科学版)》
EI
CAS
CSCD
北大核心
2007年第4期109-112,共4页
Journal of Sichuan University (Engineering Science Edition)
基金
国家高技术研究与发展计划(2003AA513010)
四川省科技攻关项目(05GG021-003-3)
辐射物理及技术教育部重点实验室(四川大学)(K2005-10)