摘要
Titanium oxides （TiO2） and TiO2 films have recently attracted more attention on the application of microelectronic devices and microwave communication systems for processing temperature and environmentally stable dielectric properties characterized by high relative dielectric constant and low dielectric loss. Many deposition methods have been used to prepare TiO2 films including pulsed laser deposition, filered arc deposition, sol-gel method and reactive sputtering methods. Previous reports on TiO2 films prepared by MDO have primarily focused on surface mechanical and biologic properties, in contrast.
