摘要
此篇论文将介绍一个用于半导体光罩上图样设计以及可用于实际生产的光刻反向计算技术(ILT)。在论文中将讨论有关ILT的最新发展,包括在超成像极限协助图样(SRAF)的生成,可增加制程宽容度的ILT,以及如何生成满足光罩生产标准的图样等方面。从内部的研究结果和客户的使用结果可以看出,ILT已经不再只是一种用于研究的工具,而是已经可以用于先进半导体制程的大规模生产。在对各个环节优化之后,ILT可以增加制程的宽容度,同时将光罩的成本控制在可以接受的水平。
In this paper, we present the first ILT approach that can rapidly solve for the optimal photomask design and that is suitable for use in a production environment. We will discuss the latest development of ILT at Luminescent, in particular, in the areas of sub-resolution assist feature （SRAF） generation, process window ILT, and mask rule compliance （MRC）. Results collected internally and from customers demonstrate that ILT is no longer just an R＆D tool, but is in fact ready for production qualification at advanced technology nodes. By optimizing each element of the process, ILT can improve process windows while maintaining mask costs at a reasonable level.
出处
《实验力学》
CSCD
北大核心
2007年第3期295-304,共10页
Journal of Experimental Mechanics
