摘要
利用微波吸收介电谱检测技术,同步检测均匀掺杂K4Fe(CN)6盐的立方体AgCl微晶在室温条件下的自由和浅束缚光电子的衰减时间分辨谱。对比未掺杂样品发现,掺杂引入的浅电子陷阱使样品中的自由光电子衰减时间延长了338ns,衰减过程中出现一个明显的一级指数快衰减区;较高浓度掺杂情况下,测量了光作用产物对光电子衰减的影响,分析表明,光作用产物是具有深电子陷阱作用的银簇。光作用产物的出现,使得晶体中发生了浅电子陷阱到深电子陷阱效应的转变,可见掺杂使得晶体内部结构和光作用特性发生了变化。
By microwave absorption and dielectric spectrum measure technique, the decay spectra of the free and shallow-trapped electrons at room temperature in cubic AgCI microcrystals doped with K4 [ Fe （CN） 6 ] are obtained in-phase. By comparing the electron signal with that of pure specimen, it is found that the free photoelectrons decay time is delayed 338ns by the introduced shallow electron traps. A strongly first-order decay section occurs as for the photoelectrons decay process in doped emulsion. As to higher doping concentration, the influence of the photoproduct on photoelectrons decay process has been measured. By analyzing it is silver clusters with the characteristic of deep electron traps. The photoproduct make the characteristic conversion from shallow electron traps to deep electron traps appears in the microcrystal. It is obviously that the inner structure and the characteristic of photo-effect of the microcrystal are changed by the dopants.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第3期550-553,595,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.10354001)
教育部科学技术研究重点项目(No.01011)
河北省自然科学基金(No.603138)
河北大学科研基金资助项目(No.2005Q05)
关键词
微波吸收介电谱
掺杂
激光曝光
光电子衰减
浅电子陷阱
microwave absorption and dielectric spectrum
doping
laser exposure
photoelectrons decay
shallow electron traps
