摘要
采用固相反应法制备了Te掺杂的TiCoSb基half-Heusler化合物。X射线衍射分析表明,Te掺杂的TiCoSb化合物是单相。在300～850 K的温度范围内测量了材料的电阻率、赛贝克系数和热导率。结果表明:未经掺杂的TiCoSb化合物是n型半导体,在高温下有很高的赛贝克系数。在Sb位掺杂Te后,材料的电阻率和赛贝克系数的绝对值随着掺杂量的增加明显降低。材料的热导率随着掺杂量的增加而呈小幅度减小。Te掺杂后材料ZT值提高,最高的ZT值比基体提高了5倍多。
Half-Heusler compounds of Te-doped TiCoSb were prepared by solid-state reaction. XRD analysis confirmed that all the sample were crystallized in the single-phase. Their thermoelectric properties were measured in the temperature rang of 300-850 K. The un-doped TiCoSb compound shows n-type conduction and possesses high Seebeck coefficient at high temperatures. Te doping on Sb site results in a significant reduction of the electrical resistivity and Seebeck coefficient. The thermal conductivity also decreases little with increasing Te content. The maximum value of ZT is nearly 5 times larger than the un-doped TiCoSb compounds.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A02期412-414,共3页
Rare Metal Materials and Engineering
基金
国家杰出青年基金资助(50325208)
