摘要
ZnS films were deposited by pulsed laser deposition （PLD） on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. The photoluminescence （PL） spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures （200, 300, and 400 ~C） for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band （450 - 700 nm） in the visible region, exhibiting intensively white light emission.
ZnS films were deposited by pulsed laser deposition （PLD） on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. The photoluminescence （PL） spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures （200, 300, and 400 ~C） for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band （450 - 700 nm） in the visible region, exhibiting intensively white light emission.
基金
the Natural Science Foundation of Shandong Province under Grant No.Y2002A09.
