摘要
采用RF反应磁控溅射沉积ZnO薄膜,沉积完成后对薄膜进行氧气氛下的原位退火处理。薄膜的结晶状况和化学成分分别采用XRD和XPS进行分析。结果表明,该薄膜为结晶性能良好的纳米晶薄膜,具有高度的C轴取向性。薄膜的主要成分为ZnO,不存在金属态Zn。采用文中的工艺方法可获得较高质量的纳米晶ZnO薄膜。
ZnO thin films were deposited by RF reactive magnetron sputtering technology, then the films were annealed in oxygen ambient in situ. The erystallinity and chemical compositions were investigated using XRD and XPS. The results show that the films are nanoerystalline with highly C-axis oriented erystalline particles. The main compound of the films is ZnO, and there is no Zn in metal state. It proves that high quality nanoerystalline ZnO thin films can be obtained by the technology.
出处
《微纳电子技术》
CAS
2007年第9期897-899,共3页
Micronanoelectronic Technology
