摘要
研究了氩气气氛下稀土氧化物对SiC形成的影响。研究得出,石墨的理想加入量为过量20%时,稀土氧化物能够在一定程度上促进碳化硅的形成。不同种类的稀土氧化物,其催化效果不同,稀土氧化物能够改变碳化硅晶须的形貌,主要表现在改变碳化硅晶须的长径比。
The effects of Si/C ratio and rare earth oxides on the formation of silicon carbide were investigated. Experimental results show that the optimal graphite powder content is excessive 20wt% and the rare earth oxides can promote the formation of SiC to some extent. For different graphite powder contents and different kind of rare earth oxide, the catalytic effects of rare earth oxides are different. Rare earth oxides can change the morphology of the SiCw, mainly of the lineation and diameter of SiCw.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第A01期312-314,共3页
Rare Metal Materials and Engineering
