摘要
针对减少功放的非线性交调失真,提出了一种简单有效的线性化电路设计方法,并以pHEMT功放为例,通过在栅漏之间并联一个变容二极管,对引起非线性失真的pHEMT输入端电容进行补偿,使功率放大器的三阶交调减少了30 dB,并且提高了功率放大器的增益、稳定性系数等参数。通过研究可知,直接对非线性元器件进行补偿能使功放的整体性能得到提高。
A simple and efficient approach to improve linearization of power amplifiers was described. the case of pHEMT, a diode was paralleled between the gate and drain, which reduced the third-order intermodulation by about 30 dB due to voltage variable input capacitance, and the power gain and stable factor were improved. It is found that the whole performance of power amplifier is improved by compensating the nonlinearity component.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第9期785-787,共3页
Semiconductor Technology
基金
国家自然科学基金项目(60376033)
北京市教委科技发展计划项目(KM200710005015)
北京工业大学研究生科技基金资助项目(ykj-2006-286)
北京市优秀跨世纪人才基金项目(67002013200301)
北京市属市管高等学校人才强教计划资助项目(102(KB)-00856)
关键词
功率放大器
线性化
交调失真
power amplifier
linearization
intermodulation
