摘要
The magnetic random access memory(MRAM) is a key device for the future computer, information and telecommunication technologies. CAS scientists have recently developed a demo device for a new type of MRAM, which could overcome two bottleneck problems for its development, namely, high energy consumption and low storage density.
Thanks to its advantages such as data safety, anti-radiation, high speed, low density, en-ergy-efficiency and long work life, the magnetic random access memory （MRAM） is considered a key device for the future computer, information and telecommunication technologies.
