摘要
分别采用两种不同的方法制备了ZnO薄膜。①离子束溅射法(IBD),在Si(001)衬底上制备锌膜后在氧气氛炉中退火;②射频溅射法(RF),在Si(001)衬底上制备ZnO薄膜后在氧气氛炉中退火。利用X射线衍射仪和原子力显微镜(AFM)以及电感、电容、电阻综合测试仪(LCR)对两种方法制备的ZnO薄膜的结构、形貌和导电性进行了比较研究。结果表明,离子束溅射的锌膜经热氧化后得到的ZnO薄膜生长的单向性较差,表面粗糙度较大,薄膜的电阻率也比较高。
ZnO thin films were prepared by two methods. One was first prepared by IBD （ion beam sputtering deposition） and then annealed at 700℃ in O2. The another was prepared by RF magnetron sputtering and also annealed at 600℃ in O2. The structures , morphologies, and electrical resistivities of the ZnO films prepared by above two methods were determined by using XRD, AFM and LCR HITESTER. Compared with RF magnetron method, the ZnO films fabricated by ion beam sputtering have a littery growth orientation. Its average surface roughness is bigger than that by RF magnetron sputtering. Also its electrical resistivity is higher too.
出处
《理化检验（物理分册）》
CAS
2007年第1期15-18,共4页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
安徽省自然科学基金(03044703)
关键词
离子束沉积
射频磁控溅射
结构
形貌
IBD
RF rnagnetron sputtering
Structure
Surface morphology
