摘要
本文介绍了作者在日本名古屋大学理学部赤外线研究室设计和制作的一个红外单个探测器InGaAs,以及一种新型的读出回路TIA。给出了它在室温和低温条件下的电流——电压特性曲线,并且与Silicon,S119作了比较。
We introduce here the single infrared detector InGaAs and its readout circuit TIA,which was designed and made in optical and infrared lab.Nagoya University.Meanwhile,we give the experimental results of its current-bias relationshop under different temperature,and compare this result with that of the Silicon S119.Finally,we estimate the impedances of those two types of detectors in normal and low temperature.
