摘要
微分析技术已经成为微电子产业发展的重要技术支撑,FIB(focusedion beam)结合了精细加工技术和微分析技术,具有在亚微米线度上的微细加工和高分辨率成像的能力,成为强有力的TEM(transmission electron microscope)制样工具以及电路修补的有力工具.同时,FIB辐照对样品结构的损伤以及器件性能的影响受到广泛的关注.为使实际FIB的工作更优化,更有针对性,从而确保不同器件在FIB加工后的可靠性,从研究FIB辐射对材料结构的损伤入手,针对两种不同类型的晶体管(常规工艺NMOS晶体管和埋沟工艺PMOS晶体管),进行了FIB辐照下的电学性能对比.较常规工艺的NMOS晶体管,埋沟工艺的PMOS晶体管在跨导和迁移率等参数的变化情况与前者相似,但是在阈值电压变化,辐照损伤修复方面,后者显示出独特的性能.
The irradiation effect of Focused Ion Beam （FIB） on preparation of TEM （ transmission electron microscopy） sample was studied. Two types of MOS transistors, normal NMOS transistor and PMOS transistor with buried channel, were analyzed. The structural damage of the devices induced by FIB irradiation was studied. The change of transconductance and mobility in PMOS transistors with buffed channel was similar to that of NMOS transistors, while the PMOS transistors sowed their characteristic of threshold voltage self-fixing.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
2007年第1期117-122,共6页
Journal of Fudan University：Natural Science
关键词
聚焦离子束
TEM制样
非晶层
阈值电压
埋沟PMOS
focused ion beam
TEM sample
amorphous layer
threshold voltage
PMOS with buried channel
