摘要
本文对GaAs光电开关在亚纳秒光脉冲(650ps左右)触发下的性能作了理论分析。用计算机数值分析方法计算了光电开关的电导随光脉冲的变化过程,分析了光脉冲的能量、半宽度的涨落引起的光电开关的触发跳动、响应时间及幅度的变化规律。在合理选用参数时,用SPICE设计得到了上升沿为5kV/ns,触发跳动小于5ps的斜坡电压,从而证实了光电开关在亚纳秒光脉冲作用下的可行性。
The performence of GaAs optoelectronic swith triggered by subnanosecond laser pulse is analysed theoretically, and then a more suitable model of conductance and a general purpose computer program are presented. Computer numerical analysis is used to comput the varition of conductance of GaAs with laser energy and FWHM. By using SPICE, A ramp of 4kV/ns leading edge and less than 5ps jitter is designed, which has good linearity. The results verify the feasibility of GaAs optoelectronic used in subnanosecond domain.
