摘要
研究了Si重δ掺杂In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As单量子阱内高迁移率二维电子气系统中的反弱局域效应.研究表明,强的Rashba自旋轨道相互作用来源于量子阱高的结构反演不对称.高迁移率系统中,粒子的运动基于弹道输运而非扩散输运.因此,旧的理论模型不能用于拟合实验结果.由于最新的模型在实际拟合中过于复杂,一种简单可行的近似用于处理实验结果,并获得了自旋分裂能Δ0和自旋轨道耦合常数α两个重要的物理参数.该结果与对纵向电阻的Shubnikov-deHaas—SdH振荡分析获得的结果一致.高迁移率系统中的反弱局域效应研究表明,发展有效的反弱局域理论模型,对于利用Rashba自旋轨道相互作用来设计自旋器件尤为重要.
Magneto-transport measurements have been carried out on three heavily Si δ-doped In0.52 Al0.48 As/In0.53 Ga0.47 As/In0.52 Al0.48As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization （WAL） has been found in such high electron mobility systems. The strong Rashha spin-orbit （SO） coupling is due to the high structure inversion asymmetry （SIA） of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashha SO coupling constant a and the zero-field spin splitting ,△o by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas （SdH） oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing a and ,△o is important in designing future spintronics devices that utilize the Rashha SO coupling.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第7期4099-4104,共6页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目(批准号:001CB309506)
国家自然科学基金(批准号:60221502
10374094)资助的课题.~~
