期刊文献+

新一代纳米级器件物理特性仿真工具——SenTaurus Device 被引量:2

New Generation Physical Characteristic Simulation Tool of Nano-Level Device-SenTaurus Device
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摘要 介绍了Synopsys Inc.新近推出的新一代纳米层次器件物理特性仿真工具——SenTaurus Device的功能特点以及进行器件物理特性仿真的典型流程。重点介绍了为实现nm级器件物理特性的模拟引入的诸多近代器件物理模型。利用SenTaurus Device对基于Sentaurus Process生成的一个90nm NMOS器件进行了器件物理特性仿真,并给出了相应结果。 The functional characteristics and typical simulation flow of SenTaurus Device the new generation physical characteristic simulation tool were described, and several recent physical models for the simulation of nano-level device were emphatically introduced. Based on a 90 nm NMOS produced by Sentaurus Process, the simulation was run on Sentaurus Device, and the results of the nano-level device were presented.
出处 《微纳电子技术》 CAS 2007年第6期299-304,共6页 Micronanoelectronic Technology
关键词 集成电路 纳米层次 场效应晶体管 非局域隧穿 小尺寸效应 IC nano-level MOSFET nonloeal tunneling small scale effect
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参考文献4

  • 1Sentaurus device user guide[K].Version Y-2006.06,2006.
  • 2LI F,MUDANAI S,FAN Y,et al.Compact model of MOS-FET electron tunneling current through.ultra-thin SiO2 and high-k gate stacks[C] //Device Research Conference.Salt Lake City,UT,USA,2003:47-48.
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同被引文献6

  • 1关彦青,程东方,王邦麟.用TCAD进行IC新工艺的开发[J].微计算机信息,2006,22(10S):131-133. 被引量:6
  • 2于英霞,李惠军,侯志刚,张宪敏.新一代nm级集成工艺仿真工具——SenTaurus Process[J].微纳电子技术,2007,44(5):231-234. 被引量:1
  • 3YEOKS ROFAILSS GOHWL.周元兴 张志龙 等译.低压低功耗CMOS/BiCMOS超大规模集成电路[M].北京:电子工业出版社,2003.27-33.
  • 4施敏.半导体器件物理与工艺[M].第二版.苏州:苏州大学出版社,2002:127-146,480-502.
  • 5CAMPBELL S A. The science and engineering of microelectronic fabrication [M]. 2nd ed.北京:电子工业出版社, 2003: 439- 470, 488-513.
  • 6Synopsys. Sentaurus device user guide[ Z]. Synopsys Ver- sion Y - 2006.06,2006.

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