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点状籽晶法生长KDP晶体的(100)面位错分布 被引量:1

Distribution of Dislocation on(100) crystal face of KDP Crystals Growth from Point-Seed
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摘要 通过光学显微镜对点状籽晶法生长的KDP晶体(100)面位错蚀坑的观察和分析,发现柱区的位错线走向不同于片状籽晶法生长的晶体。晶体的位错主要来自籽晶的位错。通过籽晶成锥-微溶-生长的过程可以减少籽晶锥区位错向晶体中的延伸,在晶体内部,当两条夹角很小的位错线相交时会合并成一条位错线。 The dislocation on (100) crystal face of KDP crystal grown from point-seed was observed and analyzed by optical microscopy. The dislocation was not the same as the crystals grown by the traditional method. The dislocation mainly originated from the seed, which can be decreased by the following proces- ses: regeneration, dissolution and growth. When two dislocation lines with a very sharp angle met in the crystal, they would converge on one line.
出处 《青岛大学学报(自然科学版)》 CAS 2007年第1期38-41,共4页 Journal of Qingdao University(Natural Science Edition)
关键词 磷酸二氢钾晶体 点状籽晶 位错分布 腐蚀 KDP crystal point-seed distribution of dislocation etch
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参考文献14

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